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this is information on a product in full production. october 2013 docid024392 rev 2 1/13 13 STW19NM60N automotive-grade n-channel 600 v, 0.26 typ., 13 a mdmesh? ii power mosfet in a to-247 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. to-247 1 2 3 !-v $4!" ' 3 order code v ds (@t jmax ) r ds(on) max. i d p tot STW19NM60N 650 v 0.285 13 a 110 w table 1. device summary order codes marking package packaging STW19NM60N 19nm60n to-247 tube www.st.com
contents STW19NM60N 2/13 docid024392 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid024392 rev 2 3/13 STW19NM60N electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate- source voltage 25 i d drain current (continuous) at t c = 25 c 13 a i d drain current (continuous) at t c = 100 c 8.2 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 52 a p tot total dissipation at t c = 25 c 110 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 350 mj dv/dt (2) 2. i sd 13 a, di/dt 400 a/s, v dd 80 % v (br)dss , v ds(peak) v (br)dss peak diode recovery voltage slope 15 v/ns t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.14 c/w r thj-amb thermal resistance junction-amb max 50 c/w
electrical characteristics STW19NM60N 4/13 docid024392 rev 2 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t j =125 c 10 a i gss gate body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d =6.5 a 0.260 0.285 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f =1 mhz, v gs = 0 - 1000 - pf c oss output capacitance - 60 - pf c rss reverse transfer capacitance -3-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds . output equivalent capacitance v ds = 0, to 480 v, v gs =0 - 225 - pf r g intrinsic resistance f=1 mhz open drain - 3.5 - q g total gate charge v dd = 480 v, i d = 13 a v gs = 10 v (see figure 15 ) -35-nc q gs gate-source charge - 6 - nc q gd gate-drain charge - 20 - nc
docid024392 rev 2 5/13 STW19NM60N electrical characteristics table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) tu r n - o n d e l ay t i m e v dd = 300 v, i d = 6.5 a, r g = 4.7 , v gs = 10 v (see figure 14 ) -12 -ns t r rise time - 15 - ns t d(off) turn-off delay time - 55 - ns t f fall time - 25 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 13 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 52 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 13 a, v gs =0 - 1.6 v t rr reverse recovery time i sd =13 a, di/dt =100 a/s, v dd = 60 v (see figure 16 ) -300 ns q rr reverse recovery charge - 4.0 c i rrm reverse recovery current - 25 a t rr reverse recovery time v dd = 60 v di/dt =100 a/s, i sd = 13 a tj = 150c (see figure 16 ) -360 ns q rr reverse recovery charge - 4.5 c i rrm reverse recovery current - 25 a
electrical characteristics STW19NM60N 6/13 docid024392 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. static drain-source on-resistance figure 7. gate charge vs gate-source voltage i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am05527v1 i d 12 8 4 0 0 8 v d s (v) 16 (a) 412 16 24 5v 6v 4v v g s =10v 7v 20 20 am0552 8 v1 i d 0 0 v g s (v) (a) v d s =19v 12 8 4 16 24 20 4 8 26 10 am05529v1 r d s (on) 0.2 3 0.22 0.21 0.20 0 4 i d (a) ( ) 2 6 0.24 0.25 0.26 0.27 8 10 12 0.2 8 v g s = 10 v am055 3 0v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =1 3 a 12 3 00 200 100 0 400 500 v d s v d s (v) am055 3 1v1
docid024392 rev 2 7/13 STW19NM60N electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v ds vs temperature figure 13. source-drain diode forward vs temperature c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am055 3 2v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 600 7 am055 33 v1 v gs(th) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) -25 0.8 75 25 50 100 i d = 250 a 125 1.0 1.2 am05534v2 r ds(on) 1.5 1.0 0 -50 0 t j (c) (norm) -25 75 25 50 100 0.5 2.5 2.0 v gs = 10 v 125 am05535v2 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.80 0.85 0.90 0.95 1.00 1.05 i d =1ma 125 1.10 am09028v2 t j =-50c t j =150c t j =25c v s d 0 4 i s d (a) (v) 2 10 6 8 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 12 0 am1476 8 v1
test circuits STW19NM60N 8/13 docid024392 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
docid024392 rev 2 9/13 STW19NM60N package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STW19NM60N 10/13 docid024392 rev 2 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid024392 rev 2 11/13 STW19NM60N package mechanical data figure 20. to-247 drawing 0075 3 25_g
revision history STW19NM60N 12/13 docid024392 rev 2 5 revision history table 9. document revision history date revision changes 21-mar-2013 1 initial release. 24-oct-2013 2 ? modified: title, features and applications ? minor text changes
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